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r 201311a 1/9 n ??? n-channel mosfet jcs1hn60c order codes ? marking ? package halogen free ? packaging device weight jcs1hn60tc-o-t-n-a jcs1hn60c to-92 no brede 0.216 g(typ) JCS1HN60TC-R-T-N-A jcs1hn60c to-92 yes no brede 0.216 g(typ) ? package ? main characteristics i d 0.5 a to-92 v dss 600 v rdson @vgs=10v 15 ? qg 3.6 nc ? z ??? z applications z high efficiency switch mode power supplies z electronic lamp ballasts based on half bridge ? z ? z c rss ( ? 2.8pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 2.8pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message
r jcs1hn60c (x\? 201311a 2/9 5/6]ner absolute ratings (tc=25 ) ? l value n? - parameter 1v
' symbol jcs1hn60c ? } unit 0q%?$-$#q+e ? drain-source voltage v dss 600 v 0.5 a f5%?+e#q drain current -continuous i d t=25 t=100 0.31 a 0w79a%?+e#q ?# 1 ? drain current - pulse ? note 1 ? i dm 2.0 a 0q5$+e ? gate-source voltage v gss 30 v ?79amy7-g? ?# 2 ? single pulsed avalanche energy ? note 2 ? e as 20 mj my+e#q ?# 1 ? avalanche current ? note 1 ? i ar 1.0 a gy=my7-g? ?# 1 ? repetitive avalanche energy ? note 1 ? e ar 2.0 mj ?1? y
a?=0w+e ?
ffo) ?# 3 ? peak diode recovery dv/dt ? note 3 ? dv/dt 4.2 v/ns 3.0 w 6g??) power dissipation p d t c =25 -derate above 25 0.025 w/
r jcs1hn60c (x\? 201311a 3/9 +k(] electrical characteristics n? - parameter 1v
' symbol #{b?& tests conditions 0? min ? typ 0w max ?} units 1(?w off ?characteristics %?$+0+e ? drain-source voltage bv dss i d =250 ? ? on-characteristics l8l+e ? gate threshold voltage v gs(th) v ds = v gs , i d =250 ? dynamic characteristics e??+e input capacitance c iss - 200 220 pf e?*+e output capacitance c oss - 19 23 pf y
ape?+e reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 2.8 4.0 pf
r jcs1hn60c (x\? 201311a 4/9 +k(] electrical characteristics 0(?w switching characteristics &f&l$ turn-on delay time t d (on) - 9 20 ns : w&l$ turn-on rise time t r - 32 80 ns &f&l$ turn-off delay time t d (off) - 16 41 ns ;l}&l$ turn-off fall time t f v dd =300v,i d =1.0a,r g =25 ? drain-source diode characteristics and maximum ratings !?
a0wf5+e#q maximum continuous drain -source diode forward current i s - - 1.0 a !?
a0w79a+e#q maximum pulsed drain-source diode forward current i sm - - 4.0 a !?
a ?l} drain-source diode forward voltage v sd v gs =0v, i s =1.0a - - 1.0 v y
a?=&l$ reverse recovery time t rr - 185 - ns y
a?=+e9 reverse recovery charge q rr v gs =0v, i s =1.0a di f /dt=100a/ thermal characteristic 0w max n? - parameter 1v
' symbol jcs1hn60tc ? } unit 5`1?#,'lk thermal resistance, junction to case r th(j-c) ? ?
r jcs1hn60c (x\? 201311a 5/9 0.1 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25 electrical characteristics (curves) 110 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes transfer characteristics on-resistance variation vs. drain current and gate volta g e body diode forward voltage v ariation vs. source current and tem p erature capacitance characteristics gate charge characteristics on-region characteristics 0 2 4 6 8 10 01234 v ds =120v v ds =300v v ds =480v q g toltal gate charge [nc] v gs gate source voltage[v] 0.0 0.5 1.0 1.5 2.0 10 11 12 13 14 15 16 note ?
r jcs1hn60c (x\? 201311a 6/9 ((4? electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes breakdown voltage variation vs. temperature on-resistance variation vs. temperature maximum safe operating area for jcs1hn60tc maximum drain current vs. case temperature
r jcs1hn60c (x\? 201311a 7/9 ((4? electrical characteristics (curves) 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 0.01 0.1 1 0.5 single pulse 0.01 0.02 0.05 0.2 0.1 r(t) (normalized) t1 [ms] transient thermal response curve for jcs1hn60tc notes : 1. z ja (t)= r(t) * r ja 2. duty factor, d=t1/t2 3. t jm ? t a = p dm * z ja (t)
r jcs1hn60c (x\? 201311a 8/9 l?p. package mechanical data to-92 ?} unit ? mm
r jcs1hn60c (x\? 201311a 9/9 #en 1.
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z. note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 6?31?e
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' ft5f? 132013 +eb ? 86-432-64675588 64675688 64678411 p-o : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 te l ? 86-432-64678411 fax ? 86-432-64665812 web site ? www.hwdz.com.cn market department add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411 fax: 86-432-64671533

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